| Part Number | BUL118D Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting. HANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL118D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;. |
BUL118D Datasheet and Specifications PDF
The BUL118D is a Silicon NPN Power Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | BUL118D Datasheet |
|---|---|
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Manufacturer | STMicroelectronics |
| Overview | The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge terminati. (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 3 6 1.5 3 60 -65 to 150 150 Unit V V V A A A A W o o C C December 2002 1/7 BUL118D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junctio. |