| Part Number | BUV47 |
|---|---|
| Manufacturer | Bourns |
| Overview | BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● ● ● Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability B SOT-93 PACKAGE (TO. ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) V(BR)EBO Collector-emitter sustaining vol. |
BUV47 Datasheet
The BUV47 is a NPN SILICON POWER TRANSISTORS.
| Part Number | BUV47 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package. ·High voltage. ·Very high switching speed. APPLICATIONS ·Suited for 220V switchmode power supply, DC and AC motor control. PINNING PIN 1 2 3 Base Collector;connected to mounting . ICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage BUV47 BUV47B BUV47 BUV47B BUV47 BUV47B CONDITIONS IE=10mA; IC=0 IC=0.2A; IB=0;L=25mH IC=5A; IB=1A 1.5 IC=6A; IB=1.2A IC=8A; IB=2.5A 3.0 IC=9A; IB=3A IC=5A; IB=1A 1. |
| Part Number | BUV47 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V(Max.)@IC= 6A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust devic. ed trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturati. |