| Part Number | BUV47A |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·High breakdown voltage ·Fast switching time APPLICATIONS ·Suited for 220V switchmode power supply,DC and AC motor control PINNING PIN 1 2 3 Base Collector;connected to mounting b. STICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current D. |
BUV47A Datasheet
The BUV47A is a SILICON POWER TRANSISTOR.
| Part Number | BUV47A |
|---|---|
| Description | NPN SILICON POWER TRANSISTORS |
| Manufacturer | Bourns |
| Overview | BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● ● ● Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability B SOT-93 PACKAGE (TO. ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) V(BR)EBO Collector-emitter sustaining vol. |
| Part Number | BUV47A |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V(Max.)@IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust devic. ered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Satura. |