| Part Number | BUW11AF Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPT. d 4 tp < 20 ms; see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 8 and 9 3 2.5 5 10 32 0.8 A A A A W µs open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffus. |
BUW11AF Datasheet and Specifications PDF
The BUW11AF is a Silicon diffused power transistors.
| Part Number | BUW11AF Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control system. ITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2.5A; IB= 0.5A VCE=RatedVCE. |
| Part Number | BUW11AF Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PFa package ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitte. wise specified PARAMETER BUW11F IC=0.1A ; IB=0; L=25mH BUW11AF BUW11F BUW11AF BUW11F BUW11AF IC=3A; IB=0.6A CONDITIONS BUW11F BUW11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=2. |