The BUX40 is a Bipolar NPN Device.
Seme LAB
BUX40 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package..
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Inchange Semiconductor
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max.) @IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and relia.
isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 C.
Comset Semiconductors
NPN BUX40 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX41 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in mi.
ted Symbol VCEO(SUS) VEB0 ICEO ICEX IEBO hFE VCE(SAT) VBE(SAT) IS/B ES/B fT ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current Test Condition(s) IC=200 mA Min 125 7 15 8 4 1 15 8 - Typ 0.6 0.9 1.7 0.35 0.85 0.14 Max 1 1 5 1 45 1.2 1.6 2 1.2.
SavantIC
·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING(see fig.2) PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simpl.
itter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITION.
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|---|---|---|---|
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| Part Number | Manufacturer | Description |
|---|---|---|
| BUX40A | Inchange Semiconductor | NPN Transistor |