Datasheet4U Logo Datasheet4U.com

BUX40 - NPN Transistor

📥 Download Datasheet

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max.) @IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.

Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 160 V 150 V 160 V 125 V 7 V 20 A 28 A 4 A 120 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;

Overview

isc Silicon NPN Power Transistor BUX40.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Seme LAB Logo BUX40 Bipolar NPN Device Seme LAB
SavantIC Logo BUX40 SILICON POWER TRANSISTOR SavantIC
Comset Semiconductors Logo BUX40 HIGH POWER TRANSISTOR Comset Semiconductors

More Datasheets from Inchange Semiconductor

Part Number Description
BUX40A NPN Transistor
BUX41 NPN Transistor
BUX42 NPN Transistor
BUX46 NPN Transistor
BUX46A NPN Transistor
BUX47 NPN Transistor
BUX47A NPN Transistor
BUX48A NPN Transistor
BUX48B NPN Transistor
BUX48C NPN Transistor