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BUX40 - NPN Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max.) @IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power appli

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Datasheet Details

Part number BUX40
Manufacturer INCHANGE
File Size 200.58 KB
Description NPN Transistor
Datasheet download datasheet BUX40 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor BUX40 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max.) @IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.
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