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BUX47B Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor BUX47B.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching mode power supplies, CRT scanning, inverters, and other industrial applications.

Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCER VCEX Collector-Emitter Voltage (RBE= 10Ω) Collector-Emitter Voltage (VBE= -2.5V) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak tp< 5ms IB Base Current-Continuous IBM Base Current-peak tp< 5ms PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 850 V 850 V 400 V 7 V 9 A 15 A 8 A 10 A 125 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;

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