Datasheet Details
| Part number | BUX41N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.80 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUX41N-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BUX41N.
| Part number | BUX41N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.80 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUX41N-InchangeSemiconductor.pdf |
|
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· Collector-Emitter Voltage- : VCEO= 160V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 220 V VCEO Collector-Emitter Voltage 160 V VCEX Collector-Emitter Voltage VBE= -1.5V 220 V VCER Collector-Emitter Voltage RBE= 100Ω 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 18 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 3.6 A 120 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUX41N | HIGH POWER TRANSISTOR | Comset Semiconductors |
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BUX41N | Bipolar NPN Device | Seme LAB |
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BUX41 | NPN Transistor | Motorola Inc |
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BUX41 | HIGH CURRENT NPN SILICON TRANSISTOR | STMicroelectronics |
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BUX41 | SILICON POWER TRANSISTOR | SavantIC |
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