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BUX41N - Silicon NPN Power Transistor

General Description

Collector-Emitter Voltage- : VCEO= 160V(Min) High Current Capability Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon NPN Power Transistor BUX41N DESCRIPTION · Collector-Emitter Voltage- : VCEO= 160V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 220 V VCEO Collector-Emitter Voltage 160 V VCEX Collector-Emitter Voltage VBE= -1.5V 220 V VCER Collector-Emitter Voltage RBE= 100Ω 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 18 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 3.