BUX41N Datasheet
BUX41N Datasheet (Comset Semiconductors)
Comset Semiconductors
NPN BUX41N HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX41N is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in m.
FE VCE(SAT) VBE(SAT) IS/B ES/B fT ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (*) Test Condition(s) IC= 200 mA IC= 0 A, IE= 50 mA VCE= 130 V, IB= 0 A VCE= 220 V, VBE= -1.5 V.
BUX41N Datasheet (Seme LAB)
Seme LAB
BUX41N Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
d package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 55.
BUX41N Datasheet (Inchange Semiconductor)
Inchange Semiconductor
· Collector-Emitter Voltage- : VCEO= 160V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design.
emark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=50mA; IC= 0 VCE(sat)-1 VCE(sat)-2 Collector-Emitter V.