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BUX41 - NPN Transistor

General Description

· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO(SUS) Collector-Emitter Voltage 200 V VCEX Collector-Emitter Voltage VBE= -2.5V 250 V VCER Collector-Emitter Voltage RBE= 100Ω 240 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 3 A 120 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W BUX41 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;

Overview

isc Silicon NPN Power Transistor.