BUX41 Datasheet and Specifications PDF

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUX41/D SWITCHMODE Series NPN Silicon Power Transistor BUX41 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS ÎÎÎÎÎÎÎ.

E =
* 2.5 V) Collector
*Emitter Voltage (RBE = 100 Ω) 250 240 15 20 3 VCER IC ICM IB Collector
*Current
* Continuous Collector
*Current
* Peak (pw 10 ms) Base
*Current continuous Total Power Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range PD 120 Watts TJ, Tstg
* 65 to 200 . . ..

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BUX41 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package..

package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552.

· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP.

is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 VCE(sat)-2 .