BUX41 Overview
Key Specifications
Max Operating Temp: 200 °C
Description
With TO-3 package - Fast switching times APPLICATIONS - For high speed ,high current and high power applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 250 200 7 15 20 3 120 200 -65~200 UNIT V V V A A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A; IB=0; L=25mH IE=50mA; IC=0 IC=5 A;IB=0.5 A IC=8 A;IB=1 A IC=8 A;IB=1 A VCE=250V;VBE=-1.5V TC=125 VCE=160V;IB=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=8A ; VCE=4V IC=1A ; VCE=15V; f=4MHz 15 8 8.0 MIN 200 7 TYP. BUX41 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX ICEO IEBO hFE-1 hFE-2 fT MAX UNIT V V 1.2 1.6 2.0 1.0 5.0 1.0 1.0 45 V V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=8A ;IB1=-IB2=1A VCC=150V,RC=18.75D 0.6 1.5 0.4 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX41 Fig.2 Outline dimensions 3.
