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isc Silicon NPN Power Transistor
BUX44
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.) @ IC= 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed, high voltage, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEX VCER VCEO
Collector-Base Voltage
Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
450
V
450
V
440
V
400
V
7
V
8
A
10
A
1.