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BUX44 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.) @ IC= 2A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon NPN Power Transistor BUX44 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.) @ IC= 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high voltage, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCER VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 450 V 450 V 440 V 400 V 7 V 8 A 10 A 1.