BUX47A Datasheet and Specifications PDF

The BUX47A is a SILICON POWER TRANSISTOR.

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Max Operating Temp175 °C

BUX47A Datasheet

BUX47A Datasheet (SavantIC)

SavantIC

BUX47A Datasheet Preview

·With TO-3 package ·High voltage,high speed APPLICATIONS ·Intended for high voltage,fast switching applications PINNING(see fig.2) PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outlin.

or-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A; IB=0; IE=50mA; IC=0; IC=5A;IB=1 A IC=8A;IB=2.5A.

BUX47A Datasheet (DSI)

DSI

BUX47A Datasheet Preview

Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Di.

. VBE(SAT) IC = 5.0 A, IB = 1.0 A (1) - 1.6 V 11. fT IC = 1.0 A, VCE = 10.0 V, f = 1.0 MHz (2) 5.0 - MHz 12. Cobo VCB = 10.0 V, f = 1.0 MHz - 250.0 pF 13. t(ON) VCC = 150.0 V, IC = 5.0 A, IB = 1.0 A - 1.0 µs 14. ts VCC = 150.0 V, IC = 5.0 A, IB = 1.0 A - 3.0 µs 15. tf VCC = 150.0 V.

BUX47A Datasheet (Inchange Semiconductor)

Inchange Semiconductor

BUX47A Datasheet Preview

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high .

Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;.

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