BUX81 Datasheet and Specifications PDF

The BUX81 is a SILICON POWER TRANSISTOR.

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Part NumberBUX81 Datasheet
ManufacturerSavantIC
Overview ·With TO-3 package ·High voltage ;fast switching speed ·Low saturation voltage APPLICATIONS ·Switching-mode power supplies ,CRT scanning,inverters,and other industrial applications. ors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current g.
Part NumberBUX81 Datasheet
DescriptionNPN Silicon Transistors
ManufacturerInfineon
Overview ( DataSheet : ) . .
Part NumberBUX81 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switc. on NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8.
Part NumberBUX81 Datasheet
DescriptionSILICON NPN PLANAR TRANSISTOR
ManufacturerSeme LAB
Overview BUX81 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN . ctor
* Emitter Voltage RBE = 100Ω VCEO Collector
* Emitter Voltage(open base) IC Collector Current (d.c) ICM Peak Collector Current tp = 2ms IB Base Current (d.c) Ptot Total Power Dissipation Tmb = 50°C TSTG Storage Temperature Range TJ Maximum Junction Temperature 1000V 500V 450V 1.