| Part Number | BUX85F Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls systems PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO. CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUX84F IC=100mA ; IB=0;L=25mH BUX85F IC=0.3A ;IB=0.03A IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCES=800V; VBE=0 Tj=125 VCES=1000V; VBE=0 Tj=125 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V IC=0.2A ;VCE=10V;f=1.0MHz CONDITIONS BU. |
BUX85F Datasheet and Specifications PDF
The BUX85F is a (BUX84F / BUX85F) SILICON POWER TRANSISTOR.
| Part Number | BUX85F Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use . stor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.3A; IB= 0.03A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(. |
| Part Number | BUX85F Datasheet |
|---|---|
| Description | Silicon diffused power transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. APPLICATIONS • Converters • Inverters • Switching regulators • Motor contr.
en base * * * * * * * 0.4 400 450 1 1 2 3 18 * V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 * * 800 1000 V V CONDITIONS TYP. MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted wi. |