| Part Number | BUZ12 |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 12 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 VDS 50 V ID 42 A RDS(on) 0.028 Ω Package TO-220 AB O. ss otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.024 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA . |
BUZ12 Datasheet
The BUZ12 is a Power Transistor.
| Part Number | BUZ12 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
BUZ12
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-.
*Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) *SOA is Power Dissipation Limited *High input impedance *High speed switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION Designed for applications such as switching regulators, switching . |