BUZ12AL Overview
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.8 200 0.25 42 168 V 2.2 ns µC Values typ.
| Part number | BUZ12AL |
|---|---|
| Datasheet | BUZ12AL_SiemensSemiconductorGroup.pdf |
| File Size | 119.84 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Power Transistor |
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Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.8 200 0.25 42 168 V 2.2 ns µC Values typ.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BUZ12A | N-Channel MOSFET | INCHANGE |
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BUZ12 | N-Channel MOSFET Transistor | INCHANGE |
See all Siemens Semiconductor Group (now Infineon) datasheets
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|---|---|
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| BUZ100S | Power Transistor |
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