BUZ12AL Description
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.8 200 0.25 42 168 V 2.2 ns µC Values typ.
BUZ12AL is Power Transistor manufactured by Siemens Semiconductor Group.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
BUZ12A | N-Channel MOSFET |
Inchange Semiconductor |
BUZ12 | N-Channel MOSFET Transistor |
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.8 200 0.25 42 168 V 2.2 ns µC Values typ.