| Part Number | BUZ172 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 172 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 172 VDS -100 V ID -5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C6. it V(BR)DSS -100 -3 -0.1 -10 -10 0.4 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 µA VDS = -100 V, VGS = 0 V, Tj = 25 °C VDS = -100 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS -10. |
BUZ172 Datasheet and Specifications PDF
The BUZ172 is a Power Transistor.
| Part Number | BUZ172 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc P-Channel MOSFET Transistor
·FEATURES ·With TO-220 package ·Low input capacitance and gate charges ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi.
*With TO-220 package *Low input capacitance and gate charges *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *Load switch *Power management *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) . |