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BUZ172 - P-Channel MOSFET

Features

  • With TO-220 package.
  • Low input capacitance and gate charges.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – BUZ172

Datasheet Details

Part number BUZ172
Manufacturer Inchange Semiconductor
File Size 254.81 KB
Description P-Channel MOSFET
Datasheet download datasheet BUZ172 Datasheet
Additional preview pages of the BUZ172 datasheet.

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Full PDF Text Transcription

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Isc P-Channel MOSFET Transistor ·FEATURES ·With TO-220 package ·Low input capacitance and gate charges ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous -5.5 IDM Drain Current-Single Pulsed -22 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
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