BUZ172 Datasheet | Siemens Semiconductor Group

BUZ 172 SIPMOS ® Power Transistor - P channel - Enhancement mode - Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 172 -100 V -5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1451-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -5.5 Unit A ID IDpuls -22 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse 170 mJ ID = -5.5 A, VDD = -25 V, RGS = 25 Ω L = 8.4 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 40 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category,...