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BUZ172 - Power Transistor

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Part number BUZ172
Manufacturer SIEMENS
File Size 184.93 KB
Description Power Transistor
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BUZ 172 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 172 VDS -100 V ID -5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1451-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -5.5 Unit A ID IDpuls -22 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 170 mJ ID = -5.5 A, VDD = -25 V, RGS = 25 Ω L = 8.4 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 3.
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