BUZ22 Datasheet and Specifications PDF

The BUZ22 is a Power Transistor.

Key Specifications

PackageTO-263
Part NumberBUZ22 Datasheet
ManufacturerSiemens Semiconductor Group
Overview BUZ 22 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 22 VDS 100 V ID 34 A RDS(on) 0.055 Ω Package TO-220 AB Ordering Code C6707. min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 3 0.1 10 10 0.05 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS .
Part NumberBUZ22 Datasheet
DescriptionPOWER TRANSISTORS
ManufacturerCOMSET
Overview BUZ22 SIPMOS® POWER TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS ID IDpuls IAR EAR EAS V.
* Nchannel
* Enhancement mode
* Avalanche-rated
* TO-220 envelope
* Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS ID IDpuls IAR EAR EAS VGS RDS(on) PT tJ tstg Drain-Source Voltage Continuous Drain Current TC= 27°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjma.
Part NumberBUZ22 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel Mosfet Transistor BUZ22 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-.
*Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max)
*SOA is Power Dissipation Limited
*High input impedance
*High speed switching
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION Designed for applications such as switching regulators, switching .

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