The BUZ71A is a N-Channel MOSFET.
| Max Operating Temp | 150 °C |
|---|
| Part Number | BUZ71A Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device
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*Low RDS(on) *VGS Rated at ±20V *Silicon Gate for Fast Switching Speed *Rugged *Low Drive Requirements *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Designed especially for applications such as switching regulators, switching converters,motor drive. |
| Part Number | BUZ71A Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | STMicroelectronics |
| Overview | ® BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET™ POWER MOSFET T YPE BUZ71A s s s s s V DSS 50 V R DS(on) < 0.12 Ω ID 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE. his datasheet. o o Value 50 50 ± 20 13 52 40 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ71A THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.75 62.5 o o C/W C/W AVALANCHE CHARACTERISTICS Symbo l IAR . |
| Part Number | BUZ71A Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Intersil |
| Overview |
only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are cu.
* 13A, 50V * rDS(ON) = 0.120Ω * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART N. |
| Part Number | BUZ71A Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 71 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 A VDS 50 V ID 13 A RDS(on) 0.12 Ω Package TO-220 AB. nless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.1 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA . |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BUZ71 | Siemens Semiconductor Group | Power Transistor |
| BUZ71 | Intersil | N-Channel Power MOSFET |
| BUZ71S2 | Siemens Semiconductor Group | Power Transistor |
| BUZ71 | STMicroelectronics | N-CHANNEL POWER MOSFET |
| BUZ71L | Siemens Semiconductor Group | Power Transistor |
| BUZ71FI | STMicroelectronics | N-Channel MOSFET |
| BUZ71AL | Siemens Semiconductor Group | Power Transistor |