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isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Designed especially for applications such as switching regulators,
switching converters,motor drivers ,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
50
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
13
A
IDM
Drain Current-Single Plused
48
A
PD
Total Dissipation @TC=25℃
40
W
Tj
Max.
BUZ71A Datasheet
