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BUZ73 - N-Channel MOSFET

Key Features

  • Drain Source Voltage- : VDSS= 200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max).
  • Fast Switching Speed.
  • Low Drive Requirement.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed especially for applications such as switching regulators, switching converters,motor drivers ,relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=28℃ 7 A IDM Drain Current-Single Plused 28 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.