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isc N-Channel Mosfet Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed especially for applications such as switching regulators, switching converters,motor drivers ,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=28℃
7
A
IDM
Drain Current-Single Plused
28
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max.
BUZ73 Datasheet
