BUZ73A Datasheet | Intersil

Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features - 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power - rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as - SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching - Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (5.8A, - Linear Transfer Characteristics This type can be operated directly from integrated circuits. 200V, - High Input Impedance 0.600 Formerly...