Datasheet Summary
Semiconductor
Data Sheet
October 1998
File Number 2265.1
2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET
Features
- 2.6A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 2.500Ω (BUZ76 field effect transistor designed for applications such as
- SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub- Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject
- Linear Transfer Characteristics (2.6A, This type can be operated directly from integrated circuits.
- High Input Impedance 400V, Formerly developmental...
