BUZ76A
Overview
- 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 2.500Ω (BUZ76 field effect transistor designed for applications such as
- SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub
- Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject
- Linear Transfer Characteristics (2.6A, This type can be operated directly from integrated circuits.
- High Input Impedance 400V, Formerly developmental type TA17404.
- Majority Carrier Device 2.500 Ordering Information
- Related Literature Ohm, - TB334 “Guidelines for Soldering Surface Mount PACKAGE BRAND N-Chan- PART NUMBER Components to PC Boards” BUZ76A TO-220AB BUZ76A nel Power NOTE: When ordering, use the entire part number. Symbol MOSD FET) /Author G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-220AB Channel SOURCE DRAIN Power GATE DRAIN (FLANGE) MOSFET, TO220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ76A
