COMSET BUZ76
POWER TRANSISTORS
| Part No. | BUZ76 |
|---|---|
| Datasheet | BUZ76 Download |
| Manufacturer |  COMSET |
| Description | POWER TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Periodic Limited by Tjmax Avalanche Energy, Single pulse ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 35 mH, Tj = 25°C Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings RthJC RthJA Thermal Resistance, chip case Thermal Resistance, chip to ambient Value 400 3 12 3 5 180 20 1.8 40 -55 to +150 -55 to +150 Unit V A mJ V Ω W °C Value <3.1 <75 Unit K/W 27/11/2014 COMSET SEMICONDUCTORS 1/3 BUZ76ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings VDSS VGS(th)
