Datasheet Summary
isc N-Channel Mosfet Transistor
- Features
- Drain Source Voltage-
: VDSS= 400V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 1.8Ω(Max)
- Fast Switching Speed
- Low Drive Requirement
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION Designed for witched mode power supplies,motor control, welding,DC-DC & DC-AC converters, and in general purpose switching applications.switching regulators, switching converters.
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