Datasheet4U Logo Datasheet4U.com

BUZ76 - N-Channel MOSFET

Key Features

  • Drain Source Voltage- : VDSS= 400V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max).
  • Fast Switching Speed.
  • Low Drive Requirement.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUZ76 Power Transistor Siemens Semiconductor Group
BUZ76 N-Channel Power MOSFET Intersil Corporation
BUZ76 N-Channel MOSFET STMicroelectronics
BUZ76 POWER TRANSISTORS COMSET
BUZ76A Power Transistor Siemens Semiconductor Group

Other Datasheets by Inchange Semiconductor

Part Number Description
BUZ76A N-Channel MOSFET
BUZ71 N-Channel MOSFET
BUZ71A N-Channel MOSFET
BUZ72 N-Channel MOSFET
BUZ72A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel Mosfet Transistor BUZ76 ·FEATURES ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for witched mode power supplies,motor control, welding,DC-DC & DC-AC converters, and in general purpose switching applications.switching regulators, switching converters. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 3 A IDM Drain Current-Single Plused 12 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.