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BUZ76 Datasheet

The BUZ76 is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberBUZ76
ManufacturerIntersil
Overview BUZ76 Semiconductor Data Sheet October 1998 File Number 2264.1 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power •.
* 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power
* rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as
* SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers,
* Nanosecond Switching Speeds (3A, .
Part NumberBUZ76
DescriptionN-Channel MOSFET
ManufacturerSTMicroelectronics
Overview BUZ76 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss RoS(on) 10 BUZ76 400 V 1.80 3A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED C. 400 V ±20 V 3 A 12 A 40 W -55 to 150 °C 150 °C E 55/150/56 1/4 245 BUZ76 THERMAL DATA Rthj _case Thermal resistance junction-case max Rthj _amb Thermal resistance junction-ambient max ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters Test Condition.
Part NumberBUZ76
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel Mosfet Transistor BUZ76 ·FEATURES ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimu.
*Drain Source Voltage- : VDSS= 400V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max)
*Fast Switching Speed
*Low Drive Requirement
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION Designed for witched mode power supplies,motor control, weld.
Part NumberBUZ76
DescriptionPOWER TRANSISTORS
ManufacturerCOMSET
Overview BUZ76 SIPMOS® POWER TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS IDS IDM IAR EAR EAS VG.
* Nchannel
* Enhancement mode
* Avalanche-rated
* TO-220 envelope
* Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax.

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