BUZ76
Overview
- 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as
- SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers,
- Nanosecond Switching Speeds (3A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 400V,
- Linear Transfer Characteristics This type can be operated directly from integrated circuits. 1.800
- High Input Impedance Ohm, N- Formerly developmental type TA17404.
- Majority Carrier Device Channel
- Related Literature Power Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND MOSComponents to PC Boards” BUZ76 TO-220AB BUZ76 FET) /Author NOTE: When ordering, use the entire part number. Symbol () D /Keywords G (Harris SemiS conductor, NChannel Power Packaging MOSJEDEC TO-220AB FET, SOURCE TODRAIN 220AB) GATE DRAIN (FLANGE) /Creator () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ76
