BUZ76 Datasheet | Intersil

Semiconductor Data Sheet October 1998 File Number 2264.1 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features - 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power - rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as - SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, - Nanosecond Switching Speeds (3A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 400V, - Linear Transfer Characteristics This type can be operated directly from integrated circuits. 1.800 - High Input Impedance Ohm, N- Formerly...