STMicroelectronics BUZ76
N-Channel MOSFET
| Part No. | BUZ76 |
|---|---|
| Datasheet | BUZ76 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
● ULTRA FAST SWITCHING● EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● ELECTRONIC LAMP BALLAST
● DC SWITCH N - channel enhancement mode POWER MaS field effect transistor. Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications.
APPLICATIONS
include off-line use, constant current source, ultrasonic equipment and switching power supply start-up circuits. , TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (continuous) Tc =35°C Drain current (pulsed) Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1988 400 V 400 V ±20 V 3 A 12 A 40 W -55 to 150 °C 150 °C E 55/150/56 1/4 245 BUZ76 THERMAL DATA Rthj _case Thermal resistance junction-case max Rthj _amb...
