Intersil BUZ76
N-Channel Power MOSFET
| Part No. | BUZ76 |
|---|---|
| Datasheet | BUZ76 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power● rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as
● SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers,
● Nanosecond Switching Speeds (3A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 400V,
● Linear Transfer Characteristics This type can be operated directly from integrated circuits. 1.800
● High Input Impedance Ohm, N- Formerly developmental type TA17404.
● Majority Carrier Device Channel
● Related Literature Power Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND MOSComponents to PC Boards” BUZ76 TO-220AB BUZ76 FET) /Author NOTE: When ordering, use the entire part number. Symbol () D /Keywords G (Harris SemiS conductor, NChannel Power Packaging MOSJEDEC TO-220AB FET, SOURCE TODRAIN 220AB) GATE DRAIN (...
