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isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·High Input Impedance ·Low Drive Requirements ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed especially for applications such as switching regulators, switching converters,motor drivers ,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
IDM
Drain Current-Single Plused
40
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max.
BUZ72 Datasheet
