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BUZ76A Datasheet

The BUZ76A is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberBUZ76A
ManufacturerIntersil
Overview BUZ76A Semiconductor Data Sheet October 1998 File Number 2265.1 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET Features • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate po.
* 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power
* rDS(ON) = 2.500Ω (BUZ76 field effect transistor designed for applications such as
* SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub
* Nanosecond Switching Speeds relay .
Part NumberBUZ76A
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel Mosfet Transistor BUZ76A ·FEATURES ·2.6A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier D.
*2.6A, 400V
*SOA is Power Dissipation Limited
*Nanosecond Switching Speeds
*Linear Transfer Characteristics
*High Input Impedance
*Majority Carrier Device
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION Designed for switching regulators, switching con.
Part NumberBUZ76A
DescriptionN-Channel MOSFET
ManufacturerSTMicroelectronics
Overview BUZ76A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ76A Voss 400 V RoS(on) 2.50 10 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED . 400 V ±20 V 2.6 A 10 A 40 W -55 to 150 °C 150 °C E 55/150/56 1/4 249 BUZ76A THERMAL DATA Rthj _case Thermal resistance junction-case max Rthj _ amb Thermal resistance junction-ambient max ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters Test Con.
Part NumberBUZ76A
DescriptionPower Transistor
ManufacturerSiemens Semiconductor Group
Overview BUZ 76 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 A VDS 400 V ID 2.7 A RDS(on) 2.5 Ω Package TO-220 AB Ordering Code C6. l min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 400 3 0.1 10 10 2 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = .

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