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BUZ73A Datasheet

The BUZ73A is a Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberBUZ73A
ManufacturerInfineon
Overview SIPMOS ® Power Transistor BUZ 73A • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package Ordering Code BUZ 73 A TO-220 A. Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 ˚C VDS = 20.
Part NumberBUZ73A
DescriptionN-Channel Power MOSFET
ManufacturerIntersil
Overview BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate po.
* 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power
* rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as
* SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for .
Part NumberBUZ73A
DescriptionPower Transistor
ManufacturerSiemens Semiconductor Group
Overview BUZ 73 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 A VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C6. ymbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 3 0.1 10 10 0.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 200 V, VGS = 0 V, Tj = 25 °C .
Part NumberBUZ73A
DescriptionN-Channel Enhancement Mode Power MOS Transistors
ManufacturerComset Semiconductors
Overview SEMICONDUCTORS BUZ73A N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switc. This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This ty.

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