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BUZ71 - N-Channel MOSFET

Datasheet Summary

Features

  • Low RDS(on).
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – BUZ71

Datasheet Details

Part number BUZ71
Manufacturer INCHANGE
File Size 225.32 KB
Description N-Channel MOSFET
Datasheet download datasheet BUZ71 Datasheet
Additional preview pages of the BUZ71 datasheet.

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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A IDM Drain Current-Single Plused 72 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
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