| Part Number | C3D08065I Datasheet |
|---|---|
| Manufacturer | Cree |
| Overview |
C3D08065I
Silicon Carbide Schottky Diode
VRRM =
650 V
Z-Rec™ Rectifier
Features Package
IF (TC=125˚C) = 8 A Qc = 21 nC
• • • • • •
650-Volt Schottky Rectifier Ceramic P.
Package
IF (TC=125˚C) = 8 A Qc = 21 nC
* * * * * * 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits . |
C3D08065I Datasheet and Specifications PDF
The C3D08065I is a Silicon Carbide Schottky Diode.
Key Specifications
| Package | TO-220-2 |
|---|---|
| Mount Type | Through Hole |
| Pins | 2 |
| Height | 19.34 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | C3D08065I Datasheet |
|---|---|
| Description | 8A Silicon Carbide Schottky Diode |
| Manufacturer | Wolfspeed |
| Overview |
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching.
Typical Applications
* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient * Zero Reverse Recovery Current / Forward Recovery Voltage * Temperature-Independent Switching Behavior * Electrically Isolated Package (2.5kV) * Industrial Switched Mode Power Supplies * Uninterruptible & . |