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C3D08065I - Silicon Carbide Schottky Diode

Key Features

  • Package IF (TC=125˚C) = 8 A Qc = 21 nC.
  • 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits.
  • Electrically Isolated Package Essentially No Switching Losses Higher Efficiency Reduction of Hea.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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C3D08065I Silicon Carbide Schottky Diode VRRM = 650 V Z-Rec™ Rectifier Features Package IF (TC=125˚C) = 8 A Qc = 21 nC • • • • • • 650-Volt Schottky Rectifier Ceramic Package provides 2.