| Part Number | C3D10060A Datasheet |
|---|---|
| Manufacturer | Wolfspeed |
| Overview |
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching.
* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient * Zero Reverse Recovery Current / Forward Recovery Voltage * Temperature-Independent Switching Behavior Typical Applications * Industrial Switched Mode Power Supplies * Uninterruptible & AUX Power Supplies * Boost for PFC & DC-DC. |
C3D10060A Datasheet and Specifications PDF
The C3D10060A is a 10A Silicon Carbide Schottky Diode.
Key Specifications
| Package | TO-220-2 |
|---|---|
| Mount Type | Through Hole |
| Pins | 2 |
| Height | 19.431 mm |
| Length | 10.41 mm |
| Width | 4.699 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | C3D10060A Datasheet |
|---|---|
| Description | Silicon Carbide Schottky Diode |
| Manufacturer | Cree |
| Overview |
C3D10060A
Silicon Carbide Schottky Diode
VRRM =
600 V
Z-Rec™ Rectifier
Features Package
IF (TC=135˚C) = 14 A Qc = 25 nC
• • • • • • •
600-Volt Schottky Rectifier Zero Reve.
Package
IF (TC=135˚C) = 14 A Qc = 25 nC
* * * * * * * 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF T. |