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C3M0045065K Datasheet

The C3M0045065K is a Silicon Carbide Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberC3M0045065K
ManufacturerWolfspeed
Overview C3M0045065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • C3MTM Silicon Carbide (SiC) MOSFET technology • Optimized package with sepa.
* C3MTM Silicon Carbide (SiC) MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
*.
Part NumberC3M0045065K
DescriptionSilicon Carbide Power MOSFET
ManufacturerCree
Overview VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology • O. Package
* C3MTM SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
*
* Fast intrinsic diode with low reverse recovery (Qrr) H.

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