CPH3355 Datasheet and Specifications PDF

Ordering number : ENA1905 CPH3355 SANYO Semiconductors DATA SHEET CPH3355 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistanc.

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* P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=120mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) All.

CPH3355 Power MOSFET –30V, 156mΩ, –2.5A, Single P-Channel Features • On-resistance RDS(on)1=120mΩ (typ) • 4V drive • Halogen free compliance Electrical Connection P-Channel 3 Specif.

* On-resistance RDS(on)1=120mΩ (typ)
* 4V drive
* Halogen free compliance Electrical Connection P-Channel 3 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID
*30 ±20
*2.5 V V A D.