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CPH3355 - Power MOSFET

Key Features

  • On-resistance RDS(on)1=120mΩ (typ).
  • 4V drive.
  • Halogen free compliance Electrical Connection P-Channel 3 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID.
  • 30 ±20.
  • 2.5 V V A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP.
  • 10 A Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) PD 1.0 W Junction Temperat.

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Datasheet Details

Part number CPH3355
Manufacturer onsemi
File Size 404.08 KB
Description Power MOSFET
Datasheet download datasheet CPH3355 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CPH3355 Power MOSFET –30V, 156mΩ, –2.5A, Single P-Channel www.onsemi.com Features • On-resistance RDS(on)1=120mΩ (typ) • 4V drive • Halogen free compliance Electrical Connection P-Channel 3 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID –30 ±20 –2.5 V V A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP –10 A Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) PD 1.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling.