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CPH3350 - P-Channel Silicon MOSFET

Key Features

  • P-Channel Silicon MOSFET General-Purpose Switching Device.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA0151 CPH3350 SANYO Semiconductors DATA SHEET CPH3350 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-speed switching 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --20 ±10 -3 --12 1.