CPH3351 - Power MOSFET

onsemi

Key Features

Low On-Resistance.
4V Drive.
ESD Diode-Protected Gate.
Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Value.
60 ±20.

CPH3351 power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	CPH3351
Manufacturer	onsemi
File Size	402.60 KB
Description	Power MOSFET
Datasheet	CPH3351 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CPH3351	P-Channel Silicon MOSFET	Sanyo Semicon Device
CPH3350	P-Channel Silicon MOSFET	Sanyo Semicon Device
CPH3355	P-Channel Silicon MOSFET	Sanyo Semicon Device
CPH3356	P-Channel Silicon MOSFET	Sanyo Semicon Device
CPH3303	Ultrahigh-Speed Switching Applications	Sanyo Semicon Device

Other Datasheets by onsemi

Part Number	Description
CPH3350	P-Channel Power MOSFET
CPH3355	Power MOSFET
CPH3356	Power MOSFET
CPH3348	Power MOSFET
CPH3360	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CPH3351 Power MOSFET −60V, 250mΩ, −1.8A, Single P-Channel www.onsemi.com Features • Low On-Resistance • 4V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Value −60 ±20 −1.8 −7.2 1.0 150 −55 to +150 Unit V V A A W °C °C VDSS −60V RDS(on) Max 250mΩ@ −10V 330mΩ@ −4.5V 350mΩ@ −4V ID Max −1.