| Part Number | DMG3N60SJ3 Datasheet |
|---|---|
| Manufacturer | Diodes Incorporated |
| Overview |
and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management .
and Benefits
* Low On-Resistance * High BVDSS Rating for Power Application * Low Input Capacitance * Lead-Free Finish; RoHS Compliant (Notes 1 & 2) * Halogen and Antimony Free. “Green” Device (Note 3) * For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/1. |
DMG3N60SJ3 Datasheet and Specifications PDF
The DMG3N60SJ3 is a N-CHANNEL MOSFET.
Key Specifications
| Part Number | DMG3N60SJ3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-C.
*Drain Current *ID= 2.8A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies . |