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DMNH3010LK3 Datasheet

The DMNH3010LK3 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberDMNH3010LK3
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-C.
*Drain Current
*ID= 55A@ TC=25℃
*Drain Source Voltage- : VDSS= 30V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies an.
Part NumberDMNH3010LK3
DescriptionN-Channel MOSFET
ManufacturerDiodes Incorporated
Overview This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applicat.
* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switch (UIS) test in production
* Low On-Resistance
* Fast Switching Speed
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Stan.