| Part Number | DMNH6008SCT |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-C.
*Drain Current *ID= 130A@ TC=25℃ *Drain Source Voltage- : VDSS= 60V(Min) *Static Drain-Source On-Resistance : RDS(on) = 8.0mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies a. |
DMNH6008SCT Datasheet
The DMNH6008SCT is a N-Channel MOSFET.
| Part Number | DMNH6008SCT |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | Diodes Incorporated |
| Overview |
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
A.
* Rated to +175°C *Ideal for High Ambient Temperature Environments * 100% Unclamped Inductive Switching *Ensures More Reliable and Robust End Application * Low Input Capacitance * Low Input/Output Leakage * Lead-Free Finish; RoHS Compliant (Notes 1 & 2) * Halogen and Antimony Free. “Green” Device (Not. |