DMTH6004SCT Datasheet and Specifications PDF

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source .

*Drain Current
*ID= 100A@ TC=25℃
*Drain Source Voltage- : VDSS= 60V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 3.65mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies .

and Applications This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.  Engine Management Systems  Body Control.

low on-resistance and fast switching, making it ideal for high-efficiency power management applications.
* Engine Management Systems
* Body Control Electronics
* DC-DC Converters Features
* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) .