DMTH6004SCTB Datasheet
DMTH6004SCTB Datasheet (Diodes Incorporated)
Diodes Incorporated
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features Rated to +175°C – Ideal for High Ambient Temper.
low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Features
* Rated to +175°C
* Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching
* Ensures More Reliable and Robust End Application
* Low RDS(ON)
* Minimizes Pow.
DMTH6004SCTB Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source .
*Drain Current
*ID= 100A@ TC=25℃
*Drain Source Voltage-
: VDSS= 60V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 3.4mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*Designed for use in switch mode power supplies a.